The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jun. 10, 2011
Josephine B. Chang, Mahopac, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Wilfried Ernst-august Haensch, Somers, NY (US);
Josephine B. Chang, Mahopac, NY (US);
Michael A. Guillorn, Yorktown Heights, NY (US);
Wilfried Ernst-August Haensch, Somers, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
FinFET devices and methods for the fabrication thereof are provided. In one aspect, a method for fabricating a FET device includes the following steps. A wafer is provided having an active layer on an insulator. A plurality of fin hardmasks are patterned on the active layer. A dummy gate is placed over a central portion of the fin hardmasks. One or more doping agents are implanted into source and drain regions of the device. A dielectric filler layer is deposited around the dummy gate. The dummy gate is removed to form a trench in the dielectric filler layer. The fin hardmasks are used to etch a plurality of fins in the active layer within the trench. The doping agents are activated. A replacement gate is formed in the trench, wherein the step of activating the doping agents is performed before the step of forming the replacement gate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile