The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jan. 14, 2013
Sumitomo Electric Industries, Ltd., Osaka, JP;
Tomokazu Katsuyama, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for producing an integrated optical device includes the steps of preparing a substrate including first and second regions; growing, on the substrate, a first stacked semiconductor layer including a first optical waveguiding layer, first and second cladding layers, and a first etch-stop layer between the first and second cladding layers; etching the first stacked semiconductor layer through a first etching mask formed on the first region; selectively growing, on the second region through the first etching mask, a second stacked semiconductor layer, third and fourth cladding layers, and a second etch-stop layer between the third and fourth cladding layers; and forming a ridge structure by etching the second and fourth cladding layers. The step of etching the first stacked semiconductor layer includes a step of forming a first overhang between the first and second cladding layers by selectively etching the first etch-stop layer by wet etching.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile