The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jun. 29, 2012
Yoshihiro Yoneda, Yokohama, JP;
Hirohiko Kobayashi, Yokohama, JP;
Kenji Koyama, Yokohama, JP;
Masaki Yanagisawa, Yokohama, JP;
Kenji Hiratsuka, Yokohama, JP;
Yoshihiro Yoneda, Yokohama, JP;
Hirohiko Kobayashi, Yokohama, JP;
Kenji Koyama, Yokohama, JP;
Masaki Yanagisawa, Yokohama, JP;
Kenji Hiratsuka, Yokohama, JP;
Sumitomo Electric Industries Ltd, Osaka, JP;
Abstract
A method for producing a semiconductor optical integrated device includes the steps of forming a substrate product including first and second stacked semiconductor layer portions; forming a first mask on the first and second stacked semiconductor layer portions, the first mask including a stripe-shaped first pattern region and a second pattern region, the second pattern region including a first end edge; forming a stripe-shaped mesa structure; removing the second pattern region of the first mask; forming a second mask on the second stacked semiconductor layer portion; and selectively growing a buried semiconductor layer with the first and second masks. The second mask includes a second end edge separated from the first end edge of the first mask, the second end edge being located on the side of the second stacked semiconductor layer portion in the predetermined direction with respect to the first end edge of the first mask.