The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
May. 08, 2012
Applicants:
Satoru Hanzawa, Hachioji, JP;
Hiroyuki Minemura, Kokubunji, JP;
Inventors:
Satoru Hanzawa, Hachioji, JP;
Hiroyuki Minemura, Kokubunji, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.
Hanzawa, Satoru. (2014). Semiconductor storage device with memory cell utilized as a set-dedicated memory cell (U.S. Patent No. 8634257). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8634257
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile