The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Sep. 16, 2011
Applicants:
Hye-young Park, Seongnam-si, KR;
Jeong-hee Park, Hwaseong-si, KR;
Hyun-suk Kwon, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 5/02 (2006.01); H01L 29/06 (2006.01); H01L 21/00 (2006.01); H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.