The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Apr. 22, 2011
Applicants:

Moses M. David, Woodbury, MN (US);

Ta-hua Yu, Woodbury, MN (US);

Andrew K. Hartzell, Hudson, WI (US);

Inventors:

Moses M. David, Woodbury, MN (US);

Ta-Hua Yu, Woodbury, MN (US);

Andrew K. Hartzell, Hudson, WI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 3/08 (2006.01); C23C 14/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a nanostructure is provided that includes applying a thin, random discontinuous masking layer () to a major surface () of a substrate () by plasma chemical vapor deposition. The substrate () can be a polymer, an inorganic material, an alloy, or a solid solution. The masking layer () can include the reaction product of plasma chemical vapor deposition using a reactant gas comprising a compound selected from the group consisting of organosilicon compounds, metal alkyls, metal isopropoxides, metal acetylacetonates, and metal halides. Portions () of the substrate () not protected by the masking layer () are then etched away by reactive ion etching to make the nanostructures.


Find Patent Forward Citations

Loading…