The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Sep. 14, 2011
Applicant:

Kazuto Yamamoto, Tokyo, JP;

Inventor:

Kazuto Yamamoto, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed is a transistor structure including: a first thin film transistor including, a first gate electrode; a first insulating film; a first semiconductor film; and a first light blocking film, and a second thin film transistor including, a second semiconductor film; the second insulating film; a second gate electrode; and a second light blocking film, wherein the first semiconductor film and the second semiconductor film include a first region and a second region along a thickness direction from the first insulating film side; and degree of crystallization of silicon of one of the first region or the second region is higher than the degree of crystallization of silicon of the other of the first region or the second region.


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