The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jan. 16, 2012
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Sommers, NY (US);
Eric A. Joseph, White Plains, NY (US);
Chung H. Lam, Peekskill, NY (US);
Alejandro G. Schrott, New York, NY (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Sommers, NY (US);
Eric A. Joseph, White Plains, NY (US);
Chung H. Lam, Peekskill, NY (US);
Alejandro G. Schrott, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for fabricating a phase change memory device including a plurality of in via phase change memory cells includes forming pillar heaters formed of a conductive material along a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, forming a dielectric layer along exposed areas of the substrate surrounding the pillar heaters, forming an interlevel dielectric (ILD) layer above the dielectric layer, etching a via to the dielectric layer, each via corresponding to each of pillar heater such that an upper surface of each pillar heater is exposed within each via, recessing each pillar heater, depositing phase change material in each via on each recessed pillar heater, recessing the phase change material within each via, and forming a top electrode within the via on the phase change material.