The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Aug. 30, 2007
Applicants:
Saneyuki Goya, Yokohama, JP;
Youji Nakano, Yokohama, JP;
Kouji Satake, Yokohama, JP;
Inventors:
Assignee:
Mitsubishi Heavy Industries, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photovoltaic device having a high conversion efficiency is produced in a stable manner. The conditions for film deposition of a microcrystalline silicon photovoltaic layer () in a photovoltaic device are set based on the Raman peak ratio within a Raman spectrum obtained at the substrate () side of the microcrystalline silicon layer (), and the Raman peak ratio within a Raman spectrum obtained at the opposite side to the substrate ().
Goya, Saneyuki. (2014). Method of setting conditions for film deposition, photovoltaic device, and production process, production apparatus and test method for same (U.S. Patent No. 8633378). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8633378
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile