The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Sep. 28, 2010
Applicants:

Jochen Kraft, Oberaich, AT;

Jordi Teva, Graz, AT;

Inventors:

Jochen Kraft, Oberaich, AT;

Jordi Teva, Graz, AT;

Assignee:

AMS AG, Unterpremstaetten, AT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A substrate () of semiconductor material is provided with a contact pad (). An opening () is formed through the semiconductor material from an upper surface to the contact pad, the opening forming an edge () at or near the upper surface. A dielectric layer () is applied on the semiconductor material in the opening. A metallization () is applied, which contacts the contact pad and is separated from the substrate by the dielectric layer. A top-metal () is applied, which contacts the metallization at or near the edge. A protection layer () is applied, which covers the top-metal and/or the metallization at least at or near the edge, and a passivation () is applied.


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