The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Jun. 13, 2010
Applicants:

Hanae Hata, Yokohama, JP;

Masato Nakamura, Hitachinaka, JP;

Nobuhiro Kinoshita, Kodaira, JP;

Jumpei Konno, Tachikawa, JP;

Chiko Yorita, Fujisawa, JP;

Inventors:

Hanae Hata, Yokohama, JP;

Masato Nakamura, Hitachinaka, JP;

Nobuhiro Kinoshita, Kodaira, JP;

Jumpei Konno, Tachikawa, JP;

Chiko Yorita, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/60 (2006.01); H01L 23/488 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to achieve the highly reliable and highly functional semiconductor device capable of the high-speed transmission by stacking thin chips and substrates, a connecting process and a connecting structure capable of making a solid connection at a low temperature with a low load and maintaining the shape of a connecting portion even if the connecting portion is heated in the stacking process and the subsequent mounting process are provided. In a semiconductor device in which semiconductor chips or wiring boards on which semiconductor chips are mounted are stacked, a connecting structure between electrodes of the stacked semiconductor chips or wiring boards includes a pair of electrodes mainly made of Cu and a solder layer made of Sn—In based alloy sandwiched between the electrodes, and Sn—Cu—Ni intermetallic compounds are dispersed in the solder layer.


Find Patent Forward Citations

Loading…