The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Feb. 22, 2011
Applicants:
Kensaku Motoki, Itami, JP;
Masaki Ueno, Itami, JP;
Inventors:
Kensaku Motoki, Itami, JP;
Masaki Ueno, Itami, JP;
Assignee:
Sumitomo Electric Industries Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01);
U.S. Cl.
CPC ...
Abstract
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.