The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Sep. 17, 2008
Applicants:

Minh Q. Tran, Milpitas, CA (US);

Minh-van Ngo, Fremont, CA (US);

Alexander H. Nickel, Santa Clara, CA (US);

Jeong-uk Huh, Santa Clara, CA (US);

Inventors:

Minh Q. Tran, Milpitas, CA (US);

Minh-Van Ngo, Fremont, CA (US);

Alexander H. Nickel, Santa Clara, CA (US);

Jeong-Uk Huh, Santa Clara, CA (US);

Assignee:

Spansion LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present memory device includes a substrate, a tunneling layer over the substrate, a floating gate over the tunneling layer, a dielectric over the floating gate and including silicon oxynitride, and a control gate over the dielectric. A method for fabricating such a memory device is also provided, including various approaches for forming the silicon oxynitride.


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