The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Oct. 21, 2011
Applicant:
Keisuke Otsuka, Tokyo, JP;
Inventor:
Keisuke Otsuka, Tokyo, JP;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device includes the following processes. A first groove is formed in a semiconductor substrate. A first conductive film is formed in the first groove and over the semiconductor substrate. The first conductive film is planarized over the semiconductor substrate. The planarized first conductive film is selectively etched to have the planarized first conductive film remain in a lower portion of the first groove.
Otsuka, Keisuke. (2014). Method of forming semiconductor device (U.S. Patent No. 8633073). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8633073
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile