The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Apr. 26, 2013
Applicant:

Sun Harmonics Ltd, Hangzhou, CN;

Inventors:

Yuhang Ren, Hangzhou, CN;

Zhi Huang, Hangzhou, CN;

Paifeng Luo, Hangzhou, CN;

Kai Shum, Hangzhou, CN;

Assignee:

Sun Harmonics Ltd, Hangzhou, Zhejiang, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H05H 1/24 (2006.01); H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.


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