The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2014
Filed:
Jan. 02, 2008
Henry Hieslmair, San Francisco, CA (US);
Vladimir K. Dioumaev, Mountain View, CA (US);
Shivkumar Chiruvolu, San Jose, CA (US);
Hui Du, Sunnyvale, CA (US);
Henry Hieslmair, San Francisco, CA (US);
Vladimir K. Dioumaev, Mountain View, CA (US);
Shivkumar Chiruvolu, San Jose, CA (US);
Hui Du, Sunnyvale, CA (US);
NanoGram Corporation, Milpitas, CA (US);
Abstract
Highly uniform silicon/germanium nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silicon/germanium particles can be surface modified to form the dispersions. The silicon/germanium nanoparticles can be doped to change the particle properties. The dispersions can be printed as an ink for appropriate applications. The dispersions can be used to form selectively doped deposits of semiconductor materials such as for the formation of photovoltaic cells or for the formation of printed electronic circuits.