The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2014

Filed:

Mar. 08, 2011
Applicants:

Hitohiko Ide, Saitama, JP;

Daisuke Inoue, Saitama, JP;

Yanko Marinov Todorov, Saitama, JP;

Natsumi Shibamura, Saitama, JP;

Yasunori Tabira, Saitama, JP;

Inventors:

Hitohiko Ide, Saitama, JP;

Daisuke Inoue, Saitama, JP;

Yanko Marinov Todorov, Saitama, JP;

Natsumi Shibamura, Saitama, JP;

Yasunori Tabira, Saitama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/04 (2006.01); H01M 4/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

A negative electrode active material for nonaqueous secondary batteries containing a silicon solid solution. The silicon solid solution has one or more than one of a group 3 semimetal or metal element, a group 4 semimetal or metal element except silicon, and a group 5 nonmetal or semimetal element incorporated in silicon. The solid solution shows an XRD pattern in which the position of the XRD peak of the solid solution corresponding to the XRD peak position assigned to the (422) plane of silicon shifts to the smaller or greater angle side relative to the position of the XRD peak assigned to the (422) plane of silicon peak by 0.1° to 1°. The solid solution has a lattice strain of 0.01% to 1% as determined by XRD.


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