The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

May. 26, 2009
Applicant:

Lutz Pape, Pinneberg, DE;

Inventor:

Lutz Pape, Pinneberg, DE;

Assignee:

NXP, B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

In order to further develop a method of and a system () for controlling the programming of, in particular the erase/write access to, a memory device () comprising multiple memory cells (), said memory cells () being exposed to wear resulting from repeated programming, in such way that an increased lifetime of the memory device (), in particular on an integrated circuit, is provided even under exceptional stress of the memory device (), it is proposed to provide—at least one quality measuring/determining means () being assigned to each memory cell () in order to measure and/or to determine the quality of the respective memory cell (), in particular in order to measure and/or to determine the prospective endurance specified according to a number of change cycles which the respective memory cell () can endure within a performance tolerance, and—at least one control means (), in particular by at least one access load distributor, —being coupled to each quality measuring/determining means (), and—deciding depending on the measured and/or determined quality of the memory cells (), which one is selected for programming.


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