The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Aug. 30, 2012
Emmanuel P. Quevy, El Cerrito, CA (US);
David H. Bernstein, San Francisco, CA (US);
Mehrnaz Motiee, Fremont, CA (US);
Emmanuel P. Quevy, El Cerrito, CA (US);
David H. Bernstein, San Francisco, CA (US);
Mehrnaz Motiee, Fremont, CA (US);
Silicon Laboratories Inc., Austin, TX (US);
Abstract
A method of forming a microelectromechanical systems (MEMS) device includes forming an electrode on a substrate. The method includes forming a structural layer on the substrate. The structural layer is disposed about a perimeter of the electrode and has a residual film stress gradient. The method includes releasing the structural layer to form a resonator coupled to the substrate. The residual film stress gradient deflects a first portion of the resonator out of a plane defined by a surface of the electrode.