The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Apr. 15, 2009
Lukas Frederik Tiemeijer, Eindhoven, NL;
Lukas Frederik Tiemeijer, Eindhoven, NL;
NXP, B.V., Eindhoven, NL;
Abstract
The invention relates to a field-effect transistor having a higher efficiency than the known field-effect transistors, in particular at higher operating frequencies. This is achieved by electrically connecting sources of a plurality of main current paths by means of a strap line (SL) being inductively coupled to a gate line (Gtl) and/or a drain line (Drnl) for forming an additional RF-return current path parallel to the RF-return current path in a semiconductor body (SB). The invention further relates to a field-effect transistor package, a power amplifier, a multi-stage power amplifier and a base station comprising such a field-effect transistor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile