The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Mar. 22, 2011
Hiroyuki Ohri, Kanagawa, JP;
Takashi Machida, Kanagawa, JP;
Takahiro Kawamura, Kanagawa, JP;
Yasunori Sogoh, Kanagawa, JP;
Hiroyuki Ohri, Kanagawa, JP;
Takashi Machida, Kanagawa, JP;
Takahiro Kawamura, Kanagawa, JP;
Yasunori Sogoh, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed herein is a solid-state imaging device including: a semiconductor region of a second conductivity type which is formed on a face side of a semiconductor substrate; a photoelectric conversion element which has an impurity region of a first conductivity type and which is operable to generate electric charge according to the amount of incident light and to accumulate the electric charge in the inside thereof; an electric-charge holding region which has an impurity region of the first conductivity type and in which the electric charge generated through photoelectric conversion by the photoelectric conversion element is held until read out; an intermediate transfer path through which only the electric charge generated by the photoelectric conversion element during an exposure period and being in excess of a predetermined electric charge amount is transferred into the electric-charge holding region; and an impurity layer.