The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
May. 24, 2012
Osama M. Nayfeh, Adelphi, MD (US);
Madan Dubey, South River, NJ (US);
Osama M. Nayfeh, Adelphi, MD (US);
Madan Dubey, South River, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers.