The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Mar. 18, 2011
Applicants:

Tatsuya Ishida, Oita, JP;

Masahiro Inohara, Fujisawa, JP;

Inventors:

Tatsuya Ishida, Oita, JP;

Masahiro Inohara, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to embodiments, there is provided a semiconductor device, including: a logic circuit; an interlayer insulating film formed above the logic circuit; an amorphous silicon layer including: a non-silicide layer formed on the interlayer insulating film; and a silicide layer formed on the non-silicide layer; a TFT formed on the amorphous silicon layer; and a contact plug formed to plug a through hole penetrating the interlayer insulating film, the contact plug being electrically connected to the logic circuit, an upper part of the contact plug being connected to the silicide layer.


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