The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8629436 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 14, 2014

Filed:

Aug. 16, 2010
Applicant:

Venkatraman Prabhakar, Pleasanton, CA (US);

Inventor:

Venkatraman Prabhakar, Pleasanton, CA (US);

Assignee:

Gigasi Solar, Inc., Pleasanton, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0248 (2006.01);
U.S. Cl.
CPC ...
Abstract

Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells having contacts on the backside, only. In one exemplary implementation, there is provided a thin film device. Moreover, such device may comprise a substrate, and a layer of silicon or silicon-containing material positioned on a first side of the substrate, wherein the layer comprises a n-doped region and a p-doped region. In some exemplary implementations, the device may be fabricated such that the n-doped region and the p-doped region are formed on the backside surface of the layer to create an electrical structure characterized by a P-type anode and an N-type cathode forming a junction positioned along the backside surface of the layer.


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