The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Apr. 29, 2011
Sanjay K. Banerjee, Austin, TX (US);
Leonard Franklin Register, Ii, Round Rock, TX (US);
Allan Macdonald, Austin, TX (US);
Bhagawan R. Sahu, Austin, TX (US);
Priyamvada Jadaun, Austin, TX (US);
Jiwon Chang, Austin, TX (US);
Sanjay K. Banerjee, Austin, TX (US);
Leonard Franklin Register, II, Round Rock, TX (US);
Allan MacDonald, Austin, TX (US);
Bhagawan R. Sahu, Austin, TX (US);
Priyamvada Jadaun, Austin, TX (US);
Jiwon Chang, Austin, TX (US);
Texas A&M University, College Station, TX (US);
Abstract
A Topological INsulator-based field-effect transistor (TINFET) is disclosed. The TINFET includes a first and second gate dielectric layers separated by a topological insulator (TI) layer. A first gate contact is connected to the first gate dielectric layer on the surface that is opposite the TI layer. A second gate contact may be connected to the second gate dielectric layer on the surface that is opposite the TI layer. A first TI surface contact is connected to one surface of the TI layer, and a second TI surface contact is connected to the second surface of the TI layer.