The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Feb. 12, 2010
Applicants:

Kaneyoshi Takeshita, Tokyo, JP;

Takashi Kubodera, Kanagawa, JP;

Akihiro Nakamura, Kumamoto, JP;

Inventors:

Kaneyoshi Takeshita, Tokyo, JP;

Takashi Kubodera, Kanagawa, JP;

Akihiro Nakamura, Kumamoto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a solid-state imaging element including: (A) a light reception/charge storage region formed in a semiconductor layer, the light reception/charge storage region including M light reception/charge storage layers stacked one on top of the other, where M≧2; (B) a charge output region formed in the semiconductor layer; (C) a conduction/non-conduction control region which includes a portion of the semiconductor layer located between the light reception/charge storage region and the charge output region; and (D) a conduction/non-conduction control electrode adapted to control the conduction or non-conduction state of the conduction/non-conduction control region, wherein mth potential control electrodes are provided between the mth and (m+1)th light reception/charge storage layers, where 1≦m≦(M−1), to control the potentials of the light reception/charge storage layers.


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