The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Jul. 18, 2011
Applicants:

Alexander Usoskin, Hanau, DE;

Klaus Schlenga, Linkenheim, DE;

Inventors:

Alexander Usoskin, Hanau, DE;

Klaus Schlenga, Linkenheim, DE;

Assignee:

Bruker HTS GmbH, Hanau, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high temperature superconductor (=HTS) coated conductor (), comprising an HTS layer () deposited epitaxially on a substrate (), wherein the HTS layer () exhibits a lattice with a specific crystal axis being oriented perpendicular to the substrate plane (SP), in particular wherein the HTS layer material is of ReBCO type and the c-axis (c) is oriented perpendicular to the substrate plane (SP), wherein the HIS layer () comprises particle inclusions (), in particular wherein the particle inclusions () may be used to introduce pinning of magnetic flux, is characterized in that at least a part () of the particle inclusions () are formed of the same material as the HTS layer (), and/or of chemical fractions of the material of the HTS layer (), such that the average stoichiometry of said part () of the particle inclusions () corresponds to the stoichiometry of the HTS layer (), and that the particle inclusions of said part () are discontinuities of the lattice of the HTS layer (). A more simple method for producing a HTS coated conductor with reduced losses, and with improved critical current and critical magnetic field is thereby provided.


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