The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Feb. 28, 2012
Augustin J. Hong, White Plains, NY (US);
Marinus J. Hopstaken, Carmel, NY (US);
Chien-chih Huang, Pingtung, TW;
Yu-wei Huang, Tainan, TW;
Jeehwan Kim, Los Angeles, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
Chih-fu Tseng, Tainan, TW;
Augustin J. Hong, White Plains, NY (US);
Marinus J. Hopstaken, Carmel, NY (US);
Chien-Chih Huang, Pingtung, TW;
Yu-Wei Huang, Tainan, TW;
Jeehwan Kim, Los Angeles, CA (US);
Devendra K. Sadana, Pleasantville, NY (US);
Chih-Fu Tseng, Tainan, TW;
International Business Machines Corporation, Armonk, NY (US);
Bay Zu Precision Co., Ltd., Tainan, TW;
Abstract
Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile