The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2014
Filed:
Dec. 16, 2008
Chil Seong Ah, Daejeon, KR;
Ansoon Kim, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Chang-geun Ahn, Daejeon, KR;
Jong-heon Yang, Daejeon, KR;
IN Bok Baek, Cheongju-si, KR;
Taeyoub Kim, Seoul, KR;
Gun Yong Sung, Daejeon, KR;
Seon-hee Park, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Chil Seong Ah, Daejeon, KR;
Ansoon Kim, Daejeon, KR;
Chan Woo Park, Daejeon, KR;
Chang-Geun Ahn, Daejeon, KR;
Jong-Heon Yang, Daejeon, KR;
In Bok Baek, Cheongju-si, KR;
Taeyoub Kim, Seoul, KR;
Gun Yong Sung, Daejeon, KR;
Seon-Hee Park, Daejeon, KR;
Han Young Yu, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.