The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2014

Filed:

Nov. 02, 2009
Applicants:

Garrett H. Sin, San Jose, CA (US);

Sanjeev Jain, Sunnyvale, CA (US);

Boguslaw A. Swedek, Cupertino, CA (US);

Lakshmanan Karuppiah, San Jose, CA (US);

Inventors:

Garrett H. Sin, San Jose, CA (US);

Sanjeev Jain, Sunnyvale, CA (US);

Boguslaw A. Swedek, Cupertino, CA (US);

Lakshmanan Karuppiah, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 49/00 (2012.01);
U.S. Cl.
CPC ...
Abstract

A method of forming bare silicon substrates is described. A bare silicon substrate is measured, wherein measuring is performed by a non-contact capacitance measurement device to obtain a signal at a point on the substrate. The signal or a thickness indicated by the signal is communicated to a controller. An adjusted polishing parameter according to the signal or thickness indicated by the signal is determined. After determining an adjusted polishing parameter, the bare silicon substrate is polished on a polisher using the adjusted polishing parameter.


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