The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Aug. 25, 2011
Yoshinobu Yamagami, Osaka, JP;
Yoshinobu Yamagami, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor integrated circuit includes a P-type MOS transistor and two or more N-type MOS transistors connected together in series between a first and a second power supply, an input terminal connected to a gate terminal of the P-type MOS transistor and gate terminals of the two or more N-type MOS transistors, an output terminal which is a connection node between the P-type MOS transistor and one of the two or more N-type MOS transistors connected to the P-type MOS transistor, and one or more capacitors connected to the output terminal. The drive capability of the P-type MOS transistor is higher than the overall drive capability of the two or more N-type MOS transistors connected together in series. Therefore, a semiconductor integrated circuit is provided in which fluctuations in the delay time of a delay circuit caused by variations in transistor characteristics can be reduced.