The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2014

Filed:

May. 21, 2012
Applicants:

Sung-won Yun, Sunwon-si, KR;

Chiweon Yoon, Seoul, KR;

Kyung-hwa Kang, Seoul, KR;

Jintae Kim, Suwon-si, KR;

Inventors:

Sung-Won Yun, Sunwon-si, KR;

ChiWeon Yoon, Seoul, KR;

Kyung-Hwa Kang, Seoul, KR;

JinTae Kim, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Memory devices and program methods thereof, the memory devices including a memory cell array with a three-dimensional structure, a voltage generator configured to supply a pass voltage and a program voltage to the memory cell array, and a control logic configured to make the rising slope of the pass voltage variable with a program loop during a program operation. The memory device may improve a program speed by adjusting the rising slope of the pass voltage according to the program loop.


Find Patent Forward Citations

Yun, Sung-Won. (2014). Memory devices and program methods thereof (U.S. Patent No. 8625367). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8625367

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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