The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Aug. 26, 2010
Hiroshi Tomotani, Osaka, JP;
Kazuhiko Shimakawa, Osaka, JP;
Ken Kawai, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The variable resistance nonvolatile storage device reduces variations in a resistance value of a variable resistance element () in the low resistance state, performs stable operations, and includes an LR write circuit () (i) applying a voltage to a memory cell () so that a resistance state of the variable resistance element included in the memory cell is changed from high to low, and (ii) including a first driving circuit () and a second driving circuit () which apply voltages to the memory cell and which have connected output terminals. When applying a voltage to the memory cell, the first driving circuit supplies a first current, and the second driving circuit (i) supplies a second current when a voltage at the output terminal of the first driving circuit is higher than a reference voltage VREF, and (ii) is in a high impedance state when the voltage is lower than the VREF.