The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 12, 2012
Hiroyuki Nakamura, Kanagawa, JP;
Yukihiro Sato, Kanagawa, JP;
Atsushi Fujiki, Kanagawa, JP;
Tatsuhiro Seki, Kanagawa, JP;
Hiroyuki Nakamura, Kanagawa, JP;
Yukihiro Sato, Kanagawa, JP;
Atsushi Fujiki, Kanagawa, JP;
Tatsuhiro Seki, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.