The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Mar. 30, 2009
Applicant:
Yuichi Oshima, Tsuchiura, JP;
Inventor:
Yuichi Oshima, Tsuchiura, JP;
Assignee:
Hitachi Metals, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A group III nitride semiconductor substrate production method includes preparing a bulk crystal formed of a group III nitride semiconductor single crystal. The group III nitride semiconductor single crystal has one crystalline plane and an other crystalline plane. Hardness of the other crystalline plane is smaller than hardness of the one crystalline plane. The prepared bulk crystal is cut from the other crystalline plane to the one crystalline plane of the bulk crystal.