The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 07, 2014

Filed:

Jun. 08, 2011
Applicants:

Shaoher X. Pan, San Jose, CA (US);

Jay Chen, Saratoga, CA (US);

Justin A. Payne, San Jose, CA (US);

Michael Heuken, Aachen, DE;

Inventors:

Shaoher X. Pan, San Jose, CA (US);

Jay Chen, Saratoga, CA (US);

Justin A. Payne, San Jose, CA (US);

Michael Heuken, Aachen, DE;

Assignee:

SiPhoton Inc., Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.


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