The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Mar. 06, 2009
Hiromitsu Kato, Tsukuba, JP;
Toshiharu Makino, Tsukuba, JP;
Masahiko Ogura, Tsukuba, JP;
Hideyo Okushi, Tsukuba, JP;
Satoshi Yamasaki, Tsukuba, JP;
Hiromitsu Kato, Tsukuba, JP;
Toshiharu Makino, Tsukuba, JP;
Masahiko Ogura, Tsukuba, JP;
Hideyo Okushi, Tsukuba, JP;
Satoshi Yamasaki, Tsukuba, JP;
Abstract
The present invention is contemplated for providing a diamond semiconductor device where an impurity-doped diamond semiconductor is buried in a selected area, and a method of manufacturing the same. That is, a diamond semiconductor device having an impurity-doped diamond area selectively buried in a recessed portion formed in a diamond substrate; and a method of manufacturing a diamond semiconductor device, including the steps of selectively forming an recessed portion on the {100}-facet diamond semiconductor substrate, wherein the bottom face of the recessed portion is surrounded by the {100} facet and the side face of the recessed portion is surrounded by the {110} facet, and forming an impurity-doped diamond area by epitaxially growing diamond in the <111> direction while doping with impurities and burying the recessed portion.