The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jan. 30, 2010
Applicant:
Jamal Ramdani, Scarborough, ME (US);
Inventor:
Jamal Ramdani, Scarborough, ME (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO/SiNgate insulation layer on an AlGaN (or InAlGaN) barrier layer. The SiNportion of the SiO/SiNgate insulation layer significantly reduces the formation of interface states at the junction between the gate insulation layer and the barrier layer, while the SiOportion of the SiO/SiNgate insulation layer significantly reduces the leakage current.