The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 01, 2011
Shunpei Yamazaki, Setagaya, JP;
Masahiko Hayakawa, Atsugi, JP;
Yoshifumi Tanada, Atsugi, JP;
Mitsuaki Osame, Atsugi, JP;
Aya Anzai, Yokohama, JP;
Ryota Fukumoto, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Masahiko Hayakawa, Atsugi, JP;
Yoshifumi Tanada, Atsugi, JP;
Mitsuaki Osame, Atsugi, JP;
Aya Anzai, Yokohama, JP;
Ryota Fukumoto, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.