The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jul. 30, 2008
Takuo Kaitoh, Mobara, JP;
Hidekazu Miyake, Mobara, JP;
Takeshi Sakai, Kokubunji, JP;
Terunori Saitou, Mobara, JP;
Takuo Kaitoh, Mobara, JP;
Hidekazu Miyake, Mobara, JP;
Takeshi Sakai, Kokubunji, JP;
Terunori Saitou, Mobara, JP;
Japan Display Inc., Tokyo, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-ken, JP;
Abstract
The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.