The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Sep. 07, 2011
Yuji Egi, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Toshiyuki Isa, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Yoichi Kurosawa, Kanagawa, JP;
Kunihiko Suzuki, Kanagawa, JP;
Yuji Egi, Kanagawa, JP;
Tetsuhiro Tanaka, Kanagawa, JP;
Toshiyuki Isa, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Koji Dairiki, Kanagawa, JP;
Yoichi Kurosawa, Kanagawa, JP;
Kunihiko Suzuki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.