The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jul. 21, 2011
Ayumu Sato, Kawasaki, JP;
Hideya Kumomi, Tokyo, JP;
Hisato Yabuta, Machida, JP;
Ryo Hayashi, Yokohama, JP;
Yasuyoshi Takai, Kawasaki, JP;
Ayumu Sato, Kawasaki, JP;
Hideya Kumomi, Tokyo, JP;
Hisato Yabuta, Machida, JP;
Ryo Hayashi, Yokohama, JP;
Yasuyoshi Takai, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is a top gate thin film transistor, including on a substrate: a source electrode layer; a drain electrode layer; an oxide semiconductor layer; a gate insulating layer; a gate electrode layer including an amorphous oxide semiconductor containing at least one kind of element selected from among In, Ga, Zn, and Sn; and a protective layer containing hydrogen, in which: the gate insulating layer is formed on a channel region of the oxide semiconductor layer; the gate electrode layer is formed on the gate insulating layer; and the protective layer is formed on the gate electrode layer.