The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jan. 24, 2011
Yun-mo Chung, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Kil-won Lee, Yongin, KR;
Bo-kyung Choi, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Bo-Kyung Choi, Yongin, KR;
Samsung Display Co., Ltd., , KR;
Abstract
A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 10to about 10atom/cm. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.