The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8623734 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 07, 2014

Filed:

Jun. 01, 2011
Applicants:

Chieh-fang Chen, Panchiao, TW;

Chung H. Lam, Peekskill, NY (US);

Alejandro G. Schrott, New York, NY (US);

Inventors:

Chieh-Fang Chen, Panchiao, TW;

Chung H. Lam, Peekskill, NY (US);

Alejandro G. Schrott, New York, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode.


Find Patent Forward Citations

Chen, Chieh-Fang. (2014). Method to selectively grow phase change material inside a via hole (U.S. Patent No. 8623734). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8623734

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