The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Mar. 16, 2012
Applicants:
Yongkuk Jeong, Suwon-si, KR;
Hyun-kwan Yu, Suwon-si, KR;
Kieun Kim, Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is fabricated by providing a substrate including a silicon channel layer and a silicon-germanium channel layer, forming gate structures disposed on the silicon channel layer and on the silicon-germanium channel layer, forming a first protection layer to cover the resultant structure including the gate structures, and injecting hydrogen and/or its isotopes into the silicon-germanium channel layer. The silicon and silicon-germanium channel layers may be oriented along a <100> direction. Related devices are also described.