The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Dec. 15, 2011
Jong-han Shin, Gyeonggi-do, KR;
Kyung-bo Kim, Gyeonggi-do, KR;
Jong-Han Shin, Gyeonggi-do, KR;
Kyung-Bo Kim, Gyeonggi-do, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming an isolation layer for defining an active region by using the hard mask pattern, forming a buried gate in and across the active region and the isolation layer over the substrate, forming an inter-layer dielectric layer over the substrate, forming a storage node contact hole that exposes the hard mask pattern by selectively etching the inter-layer dielectric layer, extending the storage node contact hole to expose the active region by removing the hard mask pattern exposed under the storage node contact hole, and forming a storage node contact plug that fills the extended storage node contact hole.