The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Nov. 16, 2012
Panasonic Corporation, Osaka, JP;
Kenichirou Nishida, Osaka, JP;
Hisao Nagai, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A method for fabricating a thin-film semiconductor device for display according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a molybdenum metal layer above the undercoat layer; forming a gate electrode from the metal layer by an etching process; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer which is a polysilicon layer by annealing the non-crystalline silicon layer at a temperature in a range from 700° C. to 1400° C.; forming a source electrode and a drain electrode above the polysilicon layer; and performing hydrogen plasma treatment at a stage after the metal layer is formed and before the polysilicon layer is formed, using a radio frequency power in a range from 0.098 W/cmto 0.262 W/cm.