The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jan. 23, 2012
Shinya Fujioka, Yokohama, JP;
Tomohiro Kawakubo, Yokohama, JP;
Koichi Nishimura, Yokohama, JP;
Kotoku Sato, Yokohama, JP;
Shinya Fujioka, Yokohama, JP;
Tomohiro Kawakubo, Yokohama, JP;
Koichi Nishimura, Yokohama, JP;
Kotoku Sato, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes a memory core with a plurality of memory cells, an internal voltage generator and a low power entry circuit. The low power entry circuit receives a plurality of control signals which are provided to a command decoder, and generates a low power signal indicating a low power consumption mode where a refresh operation is prohibited. The internal voltage generator includes a detector and at least one of booster circuits. The internal voltage generator, coupled to the memory core via an internal power supply line, generates a boosted internal voltage based on an external voltage and supplies the boosted internal voltage to the memory core via the internal power supply line. The internal voltage generator stops supplying the boosted internal voltage to the internal power supply line in response to the low power signal while the external voltage is supplied to the semiconductor device.