The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2013

Filed:

Apr. 13, 2012
Applicants:

Chongwu Zhou, Arcadia, CA (US);

Koungmin Ryu, Los Angeles, CA (US);

Alexander Badmaev, Pasadena, CA (US);

Chuan Wang, Los Angeles, CA (US);

Inventors:

Chongwu Zhou, Arcadia, CA (US);

Koungmin Ryu, Los Angeles, CA (US);

Alexander Badmaev, Pasadena, CA (US);

Chuan Wang, Los Angeles, CA (US);

Assignee:

University of Southern California, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes.


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