The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2013
Filed:
Jun. 16, 2008
Huikai Xie, Gainesville, FL (US);
Ant Ural, Gainesville, FL (US);
Huikai Xie, Gainesville, FL (US);
Ant Ural, Gainesville, FL (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Abstract
Embodiments of the invention integrate carbon nanotubes on a CMOS substrate using localized heating. An embodiment can allow the CMOS substrate to be in a room-temperature environment during the carbon nanotube growth process. Specific embodiments utilize a maskless post-CMOS microelectromechanical systems (MEMS) process. The post-CMOS MEMS process according to an embodiment of the present invention provides a carbon nanotube growth process that is foundry CMOS compatible. The maskless process, according to an embodiment, eliminates the need for photomasks after the CMOS fabrication and can preserve whatever feature sizes are available in the foundry CMOS process. Embodiments integrate single-walled carbon nanotube devices into a CMOS platform.